ST · FETs & Power MOSFETs · MPN STP45N60DM6
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.75V |
| Pd - Power Dissipation | 210W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 85mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.92nF |
600V 30A 4.75V 210W 85mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS