ST STP45N60DM2AG

ST · FETs & Power MOSFETs · MPN STP45N60DM2AG

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)56nC@10V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)34A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)93mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.5nF
TypeN-Channel

Technical details

600V 34A 5V 250W 93mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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