ST STP43N60DM2

ST · FETs & Power MOSFETs · MPN STP43N60DM2

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Specifications

Gate Charge(Qg)56nC@480V
Drain to Source Voltage650V
Current - Continuous Drain(Id)34A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)93mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.5nF

Technical details

N-Channel 650V 34A 250W Through Hole TO-220

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