ST STP42N60M2-EP

ST · FETs & Power MOSFETs · MPN STP42N60M2-EP

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)112pF
Current - Continuous Drain(Id)34A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)87mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.37nF
TypeN-Channel

Technical details

N-Channel 600V 34A 250W Through Hole TO-220

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