ST STP3N80K5

ST · FETs & Power MOSFETs · MPN STP3N80K5

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Specifications

Gate Charge(Qg)9.5nC@640V
Drain to Source Voltage800V
Current - Continuous Drain(Id)2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)0.6pF
RDS(on)2.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)130pF

Technical details

N-Channel 800V 2.5A 60W Through Hole TO-220

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