ST STP3N62K3

ST · FETs & Power MOSFETs · MPN STP3N62K3

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Specifications

Drain to Source Voltage620V
Gate Charge(Qg)13nC@10V
Current - Continuous Drain(Id)2.7A
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation45W
RDS(on)2.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)385pF

Technical details

620V 2.7A 4.5V 45W 2.5Ω@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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