ST STP3N150

ST · FETs & Power MOSFETs · MPN STP3N150

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Specifications

Gate Charge(Qg)29.3nC@10V
Drain to Source Voltage1.5kV
Output Capacitance(Coss)102pF
Current - Continuous Drain(Id)2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)13.2pF
RDS(on)9Ω@10V
Number1 N-channel
Input Capacitance(Ciss)939pF
TypeN-Channel

Technical details

1.5kV 2.5A 5V 140W 9Ω@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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