ST STP38N65M5

ST · FETs & Power MOSFETs · MPN STP38N65M5

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Specifications

Gate Charge(Qg)71nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)74pF
Current - Continuous Drain(Id)30A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation190W
Reverse Transfer Capacitance (Crss@Vds)5.8pF
RDS(on)95mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3nF
TypeN-Channel

Technical details

650V 30A 5V 190W 95mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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