ST · FETs & Power MOSFETs · MPN STP34N65M5
No reviews yet — be the first to review ST STP34N65M5.
| Gate Charge(Qg) | 62.5nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 6.3pF |
| RDS(on) | 90mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.7nF |
650V 28A 5V 190W 90mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS