ST · FETs & Power MOSFETs · MPN STP33N60DM2
No reviews yet — be the first to review ST STP33N60DM2.
| Gate Charge(Qg) | 43nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 24A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 130mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.87nF |
600V 24A 4V 190W 130mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS