ST STP2N105K5

ST · FETs & Power MOSFETs · MPN STP2N105K5

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Specifications

Gate Charge(Qg)10nC@10V
Drain to Source Voltage1.05kV
Output Capacitance(Coss)15pF
Current - Continuous Drain(Id)1.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)0.5pF
RDS(on)6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)115pF
TypeN-Channel

Technical details

1.05kV 1.5A 4V 60W 6Ω@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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