ST STP28NM60ND

ST · FETs & Power MOSFETs · MPN STP28NM60ND

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)62.5nC@10V
Current - Continuous Drain(Id)23A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation190W
Reverse Transfer Capacitance (Crss@Vds)5.5pF
RDS(on)150mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.09nF
TypeN-Channel

Technical details

600V 23A 5V 190W 150mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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