ST STP28NM50N

ST · FETs & Power MOSFETs · MPN STP28NM50N

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Specifications

Gate Charge(Qg)50nC@400V
Drain to Source Voltage500V
Current - Continuous Drain(Id)21A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)4.3pF
RDS(on)135mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.735nF

Technical details

N-Channel 500V 21A 150W Through Hole TO-220

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