ST STP28N65M2

ST · FETs & Power MOSFETs · MPN STP28N65M2

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)35nC@10V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation170W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.44nF
TypeN-Channel

Technical details

N-Channel 650V 20A 170W Through Hole TO-220

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