ST STP28N60DM2

ST · FETs & Power MOSFETs · MPN STP28N60DM2

No reviews yet — be the first to review ST STP28N60DM2.

Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)21A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation170W
Reverse Transfer Capacitance (Crss@Vds)1.6pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.5nF
TypeN-Channel

Technical details

600V 21A 5V 170W 160mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs