ST STP26NM60N

ST · FETs & Power MOSFETs · MPN STP26NM60N

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)115pF
Current - Continuous Drain(Id)20A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)165mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
TypeN-Channel

Technical details

N-Channel 600V 20A 140W Through Hole TO-220

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