ST · FETs & Power MOSFETs · MPN STP26N60M2
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | - |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 169W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 140mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.36nF |
20A 3V 169W 140mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS