ST STP25N60M2-EP

ST · FETs & Power MOSFETs · MPN STP25N60M2-EP

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)29nC@10V
Output Capacitance(Coss)56pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)1.6pF
RDS(on)188mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.09nF
TypeN-Channel

Technical details

N-Channel 600V 18A 150W Through Hole TO-220

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