ST STP24NM60N

ST · FETs & Power MOSFETs · MPN STP24NM60N

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)44nC@480V
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)3.2pF
RDS(on)168mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.33nF

Technical details

N-Channel 600V 17A 125W Through Hole TO-220

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