ST STP24N60M6

ST · FETs & Power MOSFETs · MPN STP24N60M6

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Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)4.5pF
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)960pF
TypeN-Channel

Technical details

N-Channel 600V 17A 130W Through Hole TO-220

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