ST STP24N60DM2

ST · FETs & Power MOSFETs · MPN STP24N60DM2

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Specifications

Gate Charge(Qg)29nC@480V
Drain to Source Voltage650V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)2.4pF
RDS(on)200mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.055nF

Technical details

N-Channel 650V 18A 150W Through Hole TO-220

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