ST STP23NM50N

ST · FETs & Power MOSFETs · MPN STP23NM50N

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)17A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)4.8pF
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.33nF
TypeN-Channel

Technical details

500V 17A 4V 190mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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