ST STP20NM50FD

ST · FETs & Power MOSFETs · MPN STP20NM50FD

No reviews yet — be the first to review ST STP20NM50FD.

Specifications

Gate Charge(Qg)53nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation192W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)250mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.38nF
TypeN-Channel

Technical details

500V 20A 5V 192W 250mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs