ST · FETs & Power MOSFETs · MPN STP20N60M2-EP
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| Gate Charge(Qg) | 22nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.25V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF |
| RDS(on) | 230mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 787pF |
600V 13A 3.25V 110W 230mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS