ST STP200N3LL

ST · FETs & Power MOSFETs · MPN STP200N3LL

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Specifications

Gate Charge(Qg)53nC@0V
Drain to Source Voltage30V
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation176.5W
Reverse Transfer Capacitance (Crss@Vds)510pF
RDS(on)2.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.2nF
TypeN-Channel

Technical details

30V 200A 2.5V 176.5W 2.4mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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