ST STP18NM80

ST · FETs & Power MOSFETs · MPN STP18NM80

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)70nC@10V
Output Capacitance(Coss)210pF
Current - Continuous Drain(Id)17A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation190W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)295mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.07nF
TypeN-Channel

Technical details

800V 17A 5V 190W 295mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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