ST STP18NM60N

ST · FETs & Power MOSFETs · MPN STP18NM60N

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)35nC@10V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)260mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1nF
TypeN-Channel

Technical details

N-Channel 600V 13A 110W Through Hole TO-220

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