ST STP18N55M5

ST · FETs & Power MOSFETs · MPN STP18N55M5

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Specifications

Gate Charge(Qg)31nC@10V
Drain to Source Voltage550V
Output Capacitance(Coss)42pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)3.6pF
RDS(on)192mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.26nF
TypeN-Channel

Technical details

550V 16A 5V 110W 192mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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