ST STP185N55F3

ST · FETs & Power MOSFETs · MPN STP185N55F3

No reviews yet — be the first to review ST STP185N55F3.

Specifications

Drain to Source Voltage55V
Gate Charge(Qg)100nC@10V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation330W
RDS(on)3.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.8nF

Technical details

55V 120A 4V 330W 3.8mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs