ST STP180N4F6

ST · FETs & Power MOSFETs · MPN STP180N4F6

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Specifications

Gate Charge(Qg)130nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)745pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation190W
RDS(on)2.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)560pF
Number1 N-channel
Input Capacitance(Ciss)7.735nF
TypeN-Channel

Technical details

N-Channel 40V 120A 190W Through Hole TO-220

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