ST STP170N8F7

ST · FETs & Power MOSFETs · MPN STP170N8F7

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Specifications

Gate Charge(Qg)120nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)1.33nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)78pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.71nF
TypeN-Channel

Technical details

N-Channel 80V 120A 250W Through Hole TO-220

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