ST STP16N65M5

ST · FETs & Power MOSFETs · MPN STP16N65M5

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Specifications

Gate Charge(Qg)31nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)279mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.25nF
TypeN-Channel

Technical details

650V 12A 5V 279mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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