ST STP160N75F3

ST · FETs & Power MOSFETs · MPN STP160N75F3

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Specifications

Gate Charge(Qg)85nC@37.5V
Drain to Source Voltage75V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation330W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.75nF

Technical details

N-Channel 75V 120A 330W Through Hole TO-220

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