ST STP150N10F7AG

ST · FETs & Power MOSFETs · MPN STP150N10F7AG

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Specifications

Gate Charge(Qg)127nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)2nF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)4.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9nF
TypeN-Channel

Technical details

N-Channel 100V 110A 250W Through Hole TO-220

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