ST · FETs & Power MOSFETs · MPN STP13NM60ND
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 24.5nC@10V |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 109W |
| RDS(on) | 380mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 845pF |
N-Channel 600V 11A 109W Through Hole TO-220