ST STP13NM60N

ST · FETs & Power MOSFETs · MPN STP13NM60N

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Specifications

Gate Charge(Qg)4nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)3.6pF
RDS(on)360mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)790pF
TypeN-Channel

Technical details

N-Channel 600V 11A Through Hole TO-220

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