ST STP13N95K3

ST · FETs & Power MOSFETs · MPN STP13N95K3

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Specifications

Gate Charge(Qg)51nC@10V
Drain to Source Voltage950V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation190W
Reverse Transfer Capacitance (Crss@Vds)1.2pF
RDS(on)680mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.62nF

Technical details

950V 10A 190W 680mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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