ST STP13N80K5

ST · FETs & Power MOSFETs · MPN STP13N80K5

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Specifications

Gate Charge(Qg)29nC@640V
Drain to Source Voltage800V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation190W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)370mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)870pF

Technical details

800V 12A 3V 190W 370mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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