ST STP13N60M2

ST · FETs & Power MOSFETs · MPN STP13N60M2

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)17nC@10V
Output Capacitance(Coss)32pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)1.1pF
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)580pF
TypeN-Channel

Technical details

N-Channel 600V 11A 110W Through Hole TO-220

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