ST · FETs & Power MOSFETs · MPN STP13N60DM2
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| Gate Charge(Qg) | 19nC |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 38pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.9pF |
| RDS(on) | 365mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 730pF |
| Vgs | ±25V |
N-Channel 600V 11A 110W Through Hole TO-220