ST STP12NM50FP

ST · FETs & Power MOSFETs · MPN STP12NM50FP

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Specifications

Gate Charge(Qg)39nC@10V
Drain to Source Voltage550V
Current - Continuous Drain(Id)12A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)350mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1nF

Technical details

550V 12A 4V 35W 350mΩ@10V 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS

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