ST STP12NM50

ST · FETs & Power MOSFETs · MPN STP12NM50

No reviews yet — be the first to review ST STP12NM50.

Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)12A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)350mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1nF
TypeN-Channel

Technical details

N-Channel 500V 12A 160W Through Hole TO-220

Related FETs & Power MOSFETs