ST STP12NK80Z

ST · FETs & Power MOSFETs · MPN STP12NK80Z

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)-
Current - Continuous Drain(Id)10.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation190W
Reverse Transfer Capacitance (Crss@Vds)53pF
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.62nF

Technical details

N-Channel 800V 10.5A 190W Through Hole TO-220

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