ST · FETs & Power MOSFETs · MPN STP12N65M5
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 20nC@10V |
| Current - Continuous Drain(Id) | 8.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 430mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 900pF |
| Type | N-Channel |
650V 8.5A 5V 25W 430mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS