ST STP12N120K5

ST · FETs & Power MOSFETs · MPN STP12N120K5

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Specifications

Gate Charge(Qg)44.2nC@10V
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)0.6pF
RDS(on)620mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.37nF

Technical details

1.2kV 12A 4V 250W 620mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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