ST STP11NM80

ST · FETs & Power MOSFETs · MPN STP11NM80

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Specifications

Drain to Source Voltage800V
Current - Continuous Drain(Id)11A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation150W
RDS(on)400mΩ@10V
Number1 N-channel

Technical details

800V 11A 5V 150W 400mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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