ST · FETs & Power MOSFETs · MPN STP11NM65N
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| Gate Charge(Qg) | 29nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 11A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 110W |
| RDS(on) | 455mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
650V 11A 4V 110W 455mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS