ST · FETs & Power MOSFETs · MPN STP11NM60FDFP
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 40nC@400V |
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 160W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 450mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 900pF |
600V 11A 4V 160W 450mΩ@10V 1 N-channel TO-220FPAB-3 Single FETs, MOSFETs RoHS