ST STP11NM60FD

ST · FETs & Power MOSFETs · MPN STP11NM60FD

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)11A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)450mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)900pF
TypeN-Channel

Technical details

N-Channel 600V 11A 160W Through Hole TO-220

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