ST STP11NK40Z

ST · FETs & Power MOSFETs · MPN STP11NK40Z

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Specifications

Drain to Source Voltage400V
Gate Charge(Qg)32nC@10V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation30W
RDS(on)550mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)930pF
TypeN-Channel

Technical details

N-Channel 400V 9A 30W Through Hole TO-220

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